综合资源展示一 综合资源展示一

最小化 最大化
«返回

Attosecond optical-field-enhanced carrier injection into the GaAs conduction band

  • 详细信息
标题: Attosecond optical-field-enhanced carrier injection into the GaAs conduction band
资源摘要:

Attosecond optical-field-enhanced carrier injection into the GaAs conduction band

Attosecond optical-field-enhanced carrier injection into the GaAs conduction band, Published online: 12 March 2018; doi:10.1038/s41567-018-0069-0

Significant enhancement of carrier injection into the conduction band is observed for GaAs subjected to intense resonant near-infrared laser pumping. Attosecond-resolved investigation reveals the interplay between the intra- and interband transitions.
资源原始URL http://feeds.nature.com/~r/nphys/rss/current/~3/f86DiPJ5a2E/s41567-018-0069-0
资源来源机构: NPG
来源机构所属国家: 美国
来源机构性质: 科研

RSS采集 RSS采集

最小化 最大化
您还没有登录。 请先登录再使用本系统。